Hi all,
i need to realize holes of size 20x15mm in (110) silicon wafers. 20mm size
is aligned with (111) planes. Alignement with (111) planes is not crucial.
After LPCVD silicon nitride deposition and patterning i'm planning to use
KOH etch to realize the holes. I know that K ions will diffuse in the
silicon. Will this alter crystalline quality of the surfaces exposed to
KOH etch inducing some types of defects ?

Many thanks,
Andrea