Hello Kagan

The TiO2 layer is made by Atomic Layer Deposition on a
PE-CVD-Silicondioxide using an aluminum oxide buffer. So there
shouldn´t be a lot of defects

Regards
Florian

Michael Larsson schrieb:
>  Hi Kagan,
>
> My suggestion was to use SC1, rather than Piranha to wet-clean the TiO2
> layer. I have no practical experience to back-up my comments unfortunately,
> but I am unaware of any wet etchants capable of high etch rates in Ti that
> don't either include HF or -Cl groups. With regard to TiO2, this is
> the product formed when Ti oxidises under galvanic attack. Once grown, the
> oxide acts as a barrier, inhibiting further chemical attack. The ability to
> protect underlying Ti from oxidation can obviously be reduced when
> considering a deposited layer (with defects) relative to pure, bulk
> material. Nevertheless, theory would suggest that an SC1 clean
> (NH4OH:H2O2:H20) should not attack Ti, and certainly not it's chemically
> inert oxide; even if this is indeed formed during the SC1 clean.
>
> Florian: is the layer sputtered or evaporated?