Hi all,

We have problems removing our 1.2 micron i line resist after
etching 1 micron of polysilicon (bright field mask).

In our recipe we use a combination of HBr and Cl to get a nice
endpoint when we hit the oxide/nitride under the polysilicon.
The resist after etching looks normal.

We have tried oxygen plasma, pirahna and can't seem to get a
nice and complete strip of the resist.

Anyone with any solution to this problem?  Thanks


Regards
Yan



"Bribing a child to do what you want is evil but essential"
________________________________________________________________________
Yan Loke
Institute of Microelectronics         e-mail : [email protected]
10 Science Park Road                  Phone : (65) 870-0128
The Alpha #02-19/26                   Fax : (65) 777-0670
Singapore 117684