Thanks for the replies.  Shay, you're assessment of potential cross-linking
with the other wet processes is accurate.  My observation of sample parts
indicate that the re-exposed resist (again, this question was really about
an alternate positive strip process involving re-exposing and re-developing
used resist) does not dissolve off the surface, but rather, peels off in
the developer.  Furthermore, even unexposed samples that have gone through
the permanganate and iodine baths also exhibit the same behavior:  they
appear to be soluble enough to peel off the wafer surface, but insoluble
enough that sheets of the resist peel off the surface instead of normally
dissolving.



Shay Kaplan   wrote:

The action of the photo sensitive part of the resist is to change the
hydrophobic/hydrophilic  property of the Novolac. The pure
Novolac, dissolves in high PH solutions. When the photoactive compound is
added, the matrix becomes highly hydrophobic so water based developer has a
hard time entering the matrix and the un-exposed resist has a very low
removal rate in the developer. Once the PAC has carboxylic groups, it
becomes hydrophilic so the developer has ha much easier access into the
matrix. The fact that there is also an exothermic reaction between the base
and the acid makes it even faster so the matrix removal rate is much
higher.
Regarding your strip post iodine or permanganate exposure - these might
create a on soluble cap on top of the resist. Increasing OH concentration
would help only if the other wet process do not cause some level of cross
linking which I suspect both material may cause.

Shay