hi
i am doing BHF etch on silicon dioxide deposited on silicon wafer.
i am using 5:1 BHF etchant
etch rate 120 nm/min
i want to etch 1 micron deeep channel with 200 micron width. there are
multiple channels in parallel each seprated by 6 micron. so i diped my
sample in BHF for 8.33 min
but after the etch no channels was formed and everything is etched away.
can anyone tell me what could be the problem ???
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Kamlesh Pawar
M.Tech (Biomedical Engg)
Mob :+919870062960
IIT-Bombay