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MEMSnet Home: MEMS-Talk: Oxygen plasma
Oxygen plasma
2008-09-17
김태진
2008-09-17
Bill Moffat
2008-09-18
[email protected]
2008-09-18
Bill Moffat
2008-09-18
Alok Verma
Oxygen plasma
Alok Verma
2008-09-18
Dear Bill Moffat

I too looking for Plasma based etcher / cleaner. My application is to
clean the Laser die, and verios other subcomponent requires for Laser
diode packaging before die attach and wire bonding. I also want to
etch photoresist particulerly SU8. Please suggest:

1) Which technology will be better RF or Microwave?

2) How much power required for such application?

--
With regards,

Dr. Alok Verma
Scientist
SAMEER (Ministry of Information Tech. Govt. of India)
I.I.T. Campus, Powai
Mumbai - 400 076, (INDIA)
Tel: +91 22 2572 7182 (O), 2572 7144(Lab)
       +91 22 2572 2252 & 2572 7312  (H)
       + 91 98 69223252 (mobile)
Fax: +91 22 2572 3254
Web: www.sameer.gov.in


On 9/18/08, Bill Moffat  wrote:
> The frequency of the plasma generator is not important.  The major importance
is the power delivered to the surface you wish to treat.  Natural plasma include
Lightning, D.C. but high voltage because it is at atmospheric pressure.  Aurora
Borealis, the Earths magnetic field at high atmosphere, low pressure, acting on
ionized particles from sun spots.  1 revolution per day.  Fluorescent light 50
to 60 cycles per second.  Low frequency RF up to 100 KH/Z usually capacitive
systems.  High frequency RF usually 13.54 MH/Z typically inductive systems.
Microwave 2.54 GK/Z older single wafer plasma strippers.  If the glass is flat
and the flat surface is the surface you want to bond to a capacitive system
would be the most efficient.  Call me or email me direct and I will give you
lots of details of plasma bonding.
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