Daniela,

You might be able to bond these wafers at a lower temperature ( 320- 350C) by
increasing/optimizing the voltage and time instead. You should see a much
reduced bow at lower processing temps with the same glass wafers.

Thanks
Sumant

SUSS Microtec

-----Original Message-----
From: [email protected] [mailto:[email protected]] On
Behalf Of Daniela Kögler
Sent: Wednesday, September 24, 2008 9:28 AM
To: 'General MEMS discussion'
Subject: [mems-talk] Anodic bonding

Hi,

I have to anodically bond SOI-Wafers on Borosilkatglas-Wafers. The
parameters I use are 430 °C and 1000 V.

The problem is that the wafer package after the bond process has a very high
bow (220 um +).

Does anybody now how to reduce the bow?

Thanks!
Best regards
Daniela