You're right, of course.  Its 10 - 15 A. I slipped a decimal (I was
thinking 15 nm).

 However, an anodic bond may still be possible. 20nm is still not much
of an anti diffusion layer (or else a silicon chemical migration layer -
i.e. the driving force encourages a silicon from the surface SiO2 to
transfer bond, causing a silicon from an SiO2 in the next layer down to
switch...)

Best Regards,
Chad Brubaker

EV Group
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Senior Process Technology Engineer - Direct: +1 (480) 305 2414, Main: +1
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-----Original Message-----
From: [email protected]
[mailto:[email protected]] On Behalf Of Kuijpers, P e m
Sent: Thursday, September 18, 2008 10:36 PM
To: General MEMS discussion
Cc: Brubaker Chad
Subject: Re: [mems-talk] glass and coated thin film silicon anodic wafer bonding

Hi,

Isn't native oxide something about 12A (1.2 nm) thick??

Peter Kuijpers
mailto:[email protected]