I need to etch 5 microns of sacrificial PECVD SiO2 using isotropic plasma
etch. Does anyone have any experience with this? I have seen that in
literature CF4 is mentioned to be isotropic plasma but not too many details.
Any extra info will is welcome.

Sincerely yours,

Sebastian Sosin
Yahoo Messenger: sosin_sebastian
Address: Delft University of Technology, Mekelweg 4, Room LB 01.380
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