Thank you for the response Leo. I am actually trying not to use a
silicon dioxide layer underneath. I know CF4 plasma etches nitride and
as far as I know the etch rate of silicon is very low. Any other
thoughts are appreciated.
Deepa

On Tue, Oct 28, 2008 at 2:38 PM, Xiaoguang Liu  wrote:
> Hi
> If you could afford to have SiO2 underneath the SiNx, you could dry
> etch to the SiO2 layer and remove the remaining SiO2 by BOE.
> Best
> Leo