I think you probably have a silicon suboxide and defects, but I would
think that an O2 anneal would solve the problem. Even at 900 deg. C or
maybe less.

Ed

-----Original Message-----
From: [email protected]
[mailto:[email protected]] On Behalf Of John Hilton
Sent: Friday, November 21, 2008 1:27 PM
To: General MEMS discussion
Subject: Re: [mems-talk] SiO2 deposition

I recently had OK results depositing a film of 2-3 microns SiO2 using an
e-beam evaporator.  The stoichiometry probably isn't exactly right, and
this was backed up by the fact that the dielectric strength didn't seem
as good as it should be (probably too much pure Si).  I haven't tried a
layer as thick as 20-30 microns.  What is your application?