Hi all
I am trying to use Az5412 for image reversal purpose. When I use Si wafer with
only native oxide (~1.5nm) the following recipe works fairly good.

Spin PR : 5000 rpm for 30 sec
bake : 110 C for 60 sec
Exposure : 7 sec 17 mW/cm2 using MA6 aligner
Bake : 110 for 120 sec
Flood exposure for 35 sec
Develop

But when I am trying to make pattern on Si wafer with 100 nm SiO2 deposited
using PECVD I wasn't able to use the same recipe, but wasn't able to develop the
feature less than 10 um. I tried to change the exposure time like 5 sec, 8 sec,
10 sec with 30 sec, 45 sec, 55 sec flood exposure.

No Luck!

Do you have any suggestions?

Thanks
J Sharma