Hello all,

One of my work colleagues maintains it is possible to anodically bond
III-V semiconductors (specifically GaAs) to both silicon and silicon
nitride. Even when I explained to him that the anodic bonding process
relies on the presence of metal alkaki oxides (e.g. NaO) he still stood
by his claim!

Has anyone anodically bonded a III-V material?

If I wanted to permanently bond GaAs to a thin SiN layer what technique
should I use? Thermocompression, Fusion?

Many thanks,

Dr. James Paul Grant
Postdoctoral Research Associate
Microsystems Technology Group
76 Oakfield Avenue Room 3
University of Glasgow
Glasgow
Scotland
G12 8LS
Telephone: +44(0)141 330 3374