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MEMSnet Home: MEMS-Talk: Deep (~10um) Silicon Dioxide Etching
Deep (~10um) Silicon Dioxide Etching
2009-02-03
James Paul Grant
2009-02-03
Daniel Drysdale
2009-02-03
James Paul Grant
2009-02-03
Xiaoguang Liu
2009-02-04
James Paul Grant
2009-02-04
Fei Wang
2009-02-04
Xiaoguang Liu
2009-02-05
James Paul Grant
2009-02-03
Morten Aarøe
2009-02-03
Xiaoguang Liu
2009-02-04
Morten Aarøe
2009-02-03
onny setya
Deep (~10um) Silicon Dioxide Etching
onny setya
2009-02-03
Hello, we tried Cr-mask for etching 2 up to 4µm SiOx or SiNx using an ICP. The
selectivity varied ca. 15-20:1, depends on the RF- and ICP-power.
Did you try etching ~10µm using ICP ?

Onny--

> Date: Tue, 3 Feb 2009 08:05:47 +0000
> From: [email protected]
> To: [email protected]
> Subject: [mems-talk] Deep (~10um) Silicon Dioxide Etching
>
> Hello all,
>
> I'm trying to etch square holes of dimensions ranging from 10um by 10 um
> to 64um by 64um in Silicon dioxide. The problem is I wish to etch 10um
> deep and my photoresist, AZ4562 has a poor selectivity for the various
> fluorine base gases I have tried thus far (CHF4, CHF/O2/Ar, SF6).
>
> I've been doing some reading and metal masks seem to be the solution.
> Has anyone ever done any deep silicon dioxide etching? If so any
> hints/tips/advice would be much appreciated.
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