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MEMSnet Home: MEMS-Talk: Dry Si Etching (using RIE)
Dry Si Etching (using RIE)
2009-03-07
SYED YASIR ABBAS RIZVI
2009-03-08
Jie Zou
2009-03-09
SYED YASIR ABBAS RIZVI
Dry Si Etching (using RIE)
Jie Zou
2009-03-08
What is your RIE machine? I worked two months to get a reliable recipe for
the Unaxis Shuttlelock RIE/ICP.

Jie

On Sat, Mar 7, 2009 at 10:03 AM, SYED YASIR ABBAS RIZVI <
[email protected]> wrote:

> Hi All,
>
> I'm trying to etch Si (2 microns, Device layer of SOI wafer) using RIE. I
> have a Au/Cr layer (0.225microns) and AZ3312(0.8microns) on top of it as
> mask. I used pressure 50mTorr , SF6 25scccm, O2 5sccm, ICP Power 100 and RF
> power as 50, but with this parameters the etch rate is approx 0.1
> microns/min, which is low. And I don't won't to keep my samples in chamber
> for 20-25 mins to avoid any damage to the Au/Cr layer or PR.
> Any Suggestions to increase the etch rate or if I can keep my samples in
> the
> chamber for that long without damaging it.
> If any one has done something similar, pls oblige.
> I'm looking for Anisotropic etch.
> Thanks
>
> --
> Syed Yasir Abbas Rizvi

*  Zou Jie (Jay)
*  Department of Physics
*  University of Florida
*  Tel: +1-352-846-8018
*  Email: [email protected]
*  Homepage: http://plaza.ufl.edu/zoujie/
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