The selectivity of an O2 plasma on an oxide surface should be infinite.

Ed Sebesta

-----Original Message-----
From: [email protected]
[mailto:[email protected]] On Behalf Of Evelyn B
Sent: Sunday, March 22, 2009 10:19 AM
To: General MEMS discussion; Evelyn Benabe
Subject: [mems-talk] Selectivity


I will be doing both descum and ashing of both positive and negative
resists as part of my process flow and would like to know what is a good
selectivity number for a dry process as there will be oxides present on
the wafer.  I will be doing both the descum and ashing processes using
O2 gas.