The Ti-Si contact is good in my experiment. The silicon is p-doped
(10e19/cm^3). Before sputtering Ti layerThe silicon wafer is dipped in 1:50
HF to romver nature oxide. I-V characters show linear ohmic conduction and
have no difference compared to AL-Si contact.

Maybe anneal process can improve ohmic contact.

2009/3/26 Ruiz, Marcos Daniel (SENCOE) 

> Javier,
>
> What kind of surface preparation are you doing before the deposition?
>
> I would expect that making sure your Si surface is as clean and oxide
> free as possible would improve your ability to get a good ohmic contact.
>
> Dan
>