Hello Harshal,

PECVD films processed at temperatures of 350C and higher generally provide a
higher etch resistance than those processed at lower temperature.

I would consider PECVD Silicon Carbide, as this film not only provides
excellent etch resistance to HF & BOE, but to KOH as well.

Best Regards,

Pat Kayatta
Rogue Valley Microdevices
943 Automation Way, Suite F
Medford, Or. 97504


-----Original Message-----
From: [email protected]
[mailto:[email protected]]On Behalf Of Harshal Surangalikar
Sent: Friday, April 17, 2009 12:10 PM
To: [email protected]
Subject: [mems-talk] Looking for vendors/services for HDP-CVD of
SiliconNitride


Hello,

I am looking for services/vendors in the area of "high density plasma"- CVD
(HDP-CVD) of Silicon Nitride films.

The motivation to go for HDP-CVD is to get higher wet etch resistance
(BOE/Conc. HF) than that provided by the PECVD films. If any info/references
are available on improving wet etch resistance of PECVD films, that will be
very helpful as well.

Thank for the time and best regards,
Harshal Surangalikar.

Sr. MEMS Process Engineer
Fortemedia
Cupertino, CA

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