Hi,

I want to release my sacrificial LTO (deposited by LPCVD) layer uisng
BHF/BOE, and would like to know wether the selectivity over silicon nitride
(sputterred at room temperature and a rate of ~1.5nm/min) varies with the
NH4F:HF ration in BOE? Does the selectivity increases or decreases with the
ratio?

Any answer will be appreciated.

Thanks,

Yu Wang