Try first less bias. then less RF power. then less SF6.

On Tue, May 19, 2009 at 6:11 AM, shimul saha  wrote:
> Hello,
>
> I am using BOSCH process for deep dry etching of silicon. The gases are SF6,
O2 during etching cycles and C4F8 during deposition cycles.. At present I am
getting slightly negative sidewall, but I want a positive sidewall. Can you
please provide any hint, probably changing gas ratio (incerase or decrease any
of the gas content) or power to get a positive sidewall in etching. Any
suggestions will be greatly helpful for me. Thanking you in advance.
>
> Best regards,
> Shimul

*  Zou Jie (Jay)
*  Department of Physics
*  University of Florida
*  Tel: +1-352-846-8018
*  Email: [email protected]
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