Maria:  It seemed to work just fine. Here is an SEM of SU-8 at 5 microns
thickness without cross linked bake after a DRIE etch and prior to resist
removal. As you can see the resist has been battered by the rie effects but
after a 50 micron silicon etch using SF6 + O2 chemistry it still has
coverage.

Bob Henderson

-----Original Message-----
From: [email protected] [mailto:[email protected]]
On Behalf Of Maria Matschuk
Sent: Friday, September 11, 2009 2:23 AM
To: General MEMS discussion
Subject: Re: [mems-talk] SU8

I'm wondering, if you delete the cross-linking step, how does it
withstand the development solution?

Bets regards
Maria