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MEMSnet Home: MEMS-Talk: RE: Deep etching in Si
RE: Deep etching in Si
1998-01-12
Waetzold, Sigurd
RE: Deep etching in Si
Waetzold, Sigurd
1998-01-12
Dear mr. Kwiatkowski,
We are a provider for design and simulation of Si-micromechanics.
Furthermore we offer a small and medium production of such
structures on 4"-silicon wafers.
To your request, I think that your problem can be solved by orientation
dependent etching. The crunch point for this is to choose of the
right etch conditions and to guarantee that the parameteres does not
vary during the production.

To make you a more detailed offer, please send me a sketch of your structure
and the needed number of pieces.


For our simulation tool SIMODE for the simulation of orientation
dependent etching please see also http://gemac.c.ntg.de.

With kind regards


D. Zielke
GEMAC mbH
Matthestraße 53
09113 Chemnitz
FAX: +49 371 3377 131
Tel: +49 371 3377 104
email: [email protected]


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