Hi,

my sample is composed of 3 layers of 200 nm : low stress silicon nitride /
annealed silicon oxide / low stress silicon nitride.  I want to etch those
layers in one step with using reactive ion etching.  The resist I'm using is
ZEP520A (300nm thick). The chemistry is based on CHF3, CF4 and Ar, but the
etch rate of SiN and SiO2 is to slow compare to the etch rate of ZEP
resist.  Does anyone has a recipe for silicon nitride and/or silicon oxide
etching that is selective to resist ?

Thank you for your help,

Annabelle Gascon
master student, École Polytechnique de Montréal