Process developed for Trilogy a company started by Gene Amdahl about 25
years ago.  Resist up to 40 microns thick.  Pattern definition then
reversal which allows any angle of side wall from -22 degrees to
+22degrees.  Then copper to follow up with interconnection and produce a
computer on a wafer. Contact me for further complete details.  Bill
Moffat

-----Original Message-----
From: mems-talk-bounces@memsnet.org
[mailto:mems-talk-bounces@memsnet.org] On Behalf Of leiwangsdu
Sent: Wednesday, January 13, 2010 3:18 PM
To: mems-talk
Subject: [mems-talk] Lift-off pattern of Cu or Ni film

I'm a research fellow. I have a question about lift-off process of Cu or
Ni.
Is it possible to fabricate a pattern of Cu or Ni film with nearly steep
sidewall.
The thickness of Cu or Ni is 3-4 microns. If anyone knows, please tell
me the method and the necessary process.

leiwangsdu