Weiquan,

I forgot to mention that you may want to use 90% CF4 + 10% O2 gas mixture for
your etch.  The oxygen will etch the photoresist slowly, but may also enhance
the SiO2 etch rate and minimize the carbon on the resist surface.

Brad Cantos
[email protected]
http://holage.com

On Feb 9, 2010, at 7:55 AM, weiquan yang wrote:

> My receipe is using CF4 only, and the ICP power is as high as 3000 W. Maybe
> this is the problem. I will try to find recipes with low power or SF6. Do
> you know any suitable recipe with good etch rate?
>
> Thank you