Cal-Berkeley has done work with poly-SiGe / Ge for low temperature (CMOS
compatible) surface micromachining. See references by:
A. Franke
R. Howe

Stafford Johnson
MEMSCAP, Inc.

-----Original Message-----
From: [email protected] [mailto:[email protected]] On
Behalf Of Albert Henning
Sent: Wednesday, February 17, 2010 4:12 PM
To: [email protected]; General MEMS discussion
Subject: Re: [mems-talk] SiGe deposition

SiGe deposition technology dates back roughly 25-30 years.  Look for references
in the 1980s by:

Bernie Meyerson from IBM
John Bean from Bell Labs
Jim Sturm (now at Princeton), Cliff King (was at Bell Labs/Lucent/Agere), Judy
Hoyt (now at MIT), and Jim Gibbons from Stanford

Building on the work by Meyerson and colleagues, IBM developed SiGe bipolar
transistor technology.  Gibbons and colleagues developed SiGe MOS technology,
which was then picked up and enhanced by Intel and others.

The technology to grow high-quality SiGe on Si is not trivial.  Simply etching
native oxide in HF, then going into an epi reactor, typically will not work;
oxide always grows quickly on Si, and will have to be reduced in situ before a
quality film can be deposited.

---
Albert K. Henning, PhD