Andrea,
As others here have indicated this is not like falling off a log.
Those who are doing it successfully have put a LOT of engineering into it.
Send me an E-mail directly and I can connect you with a vendor that can do
the job for you.
[email protected]
Best Regards,
Wendell McCulley
President & CEO
InterMEMS Inc.
www.InterMEMS.com
-----Original Message-----
From: [email protected] [mailto:[email protected]]
On Behalf Of Albert Henning
Sent: Wednesday, February 17, 2010 1:12 PM
To: [email protected]; General MEMS discussion
Subject: Re: [mems-talk] SiGe deposition
SiGe deposition technology dates back roughly 25-30 years. Look for
references in the 1980s by:
Bernie Meyerson from IBM
John Bean from Bell Labs
Jim Sturm (now at Princeton), Cliff King (was at Bell Labs/Lucent/Agere),
Judy Hoyt (now at MIT), and Jim Gibbons from Stanford
Building on the work by Meyerson and colleagues, IBM developed SiGe bipolar
transistor technology. Gibbons and colleagues developed SiGe MOS
technology, which was then picked up and enhanced by Intel and others.
The technology to grow high-quality SiGe on Si is not trivial. Simply
etching native oxide in HF, then going into an epi reactor, typically will
not work; oxide always grows quickly on Si, and will have to be reduced in
situ before a quality film can be deposited.
---
Albert K. Henning, PhD
Director of MEMS Technology
NanoInk, Inc.
215 E. Hacienda Avenue
Campbell, CA 95008
408-379-9069 ext 101
[email protected]
-----Original Message-----
From: Andrea Mazzolari [mailto:[email protected]]
Sent: Wednesday, February 17, 2010 6:53 AM
To: General MEMS discussion
Subject: [mems-talk] SiGe deposition
Hi all,
i need to grow by epitaxy SiGe and Ge on Si (100).
I'm very new to this.
1) May someone suggest milestone papers in this field ?
2) is it needed to "prepare" the si surface before deposition ? In
particular i guess it is needed to remove native oxide by hf. Are other
operations needed to prepare the Si surface ?
Thanks,
Andrea
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