Hello,
        Can somebody tell me a way to ensure complete removal of KOH ions after
etching Si in KOH solution. (Somebody had suggested earlier of washing the wafer
in ethanol.) This question crops up from the fact, that here at IIT Bombay , we
have fabrication facilities only for a CMOS line. Hence we have to be restricted
in our process sequence for MEMS related work, so that no furnace processing
takes place after KOH etching ( so as to avoid contamination of CMOS line). If
somebody has done something like (furnace processing after KOH etch) and has
found that contamination of alkali metal ions can be avoided, please advise us.

Thanking you all in advance.

Regards
Amit Shiwalkar
Graduate Student,
IIT Bombay