Hi H.,

I happen to have a question along these lines.
I am doing a cryo-etching on a ICPRIE oxford machine.
I am trying to get vertical smooth side walls 50 u deep in silicon.
My SF6 is at 150 sccm and o2 at 16 sccm.

Do you happen to know what my power and pressure supposed to be.

Thanks a million.

Seyed






Quoting Huy :

> Your etching time is only a couple of minutes, what's the need for a faster
> rate? I think you got the right idea, not using the Bosh process would
> definately gives you a smoother wall. by using SF6:O2 alone, you can
> easily get
> a vertical wall with minimum roghness if it's not too tall of a
> wall. comparing
> to what I've used in the past, your power is only 1/3 and your
> pressure is only
> 1/10 of what I used; if you can increase those 2 parameters with an
> increase of
> input gases, you should be able to increase your etching rate. Getting the
> right ratio between SF6 & O2 is the only tricky part.
>
>
> H.