Hi fellow fabricators,

   I am looking for suggestions to make a wafer level bond that will
yield both low resistance electrical contacts between 2 wafers and
simultaneously produce a hermetically sealed cavity at a known reference
pressure.  The peak temperature should be <300 deg C and my metalization
is currently Au/TiW.  The ideal solution would no require chemical
mechanical polishing.  We have a nice Suss wafer level bonder.  We have
explored using BCB for the seal but I not sure what the best approach
would be for electrical connections.

Thanks in advance,

  Michael