A MEMS Clearinghouse® and information portal
for the MEMS and Nanotechnology community
RegisterSign-In
MEMSnet Home About Us What is MEMS? Beginner's Guide Discussion Groups Advertise Here
News
MEMSnet Home: MEMS-Talk: PVD of thick Al-Layer
PVD of thick Al-Layer
2011-03-15
Christian Engel
2011-03-16
Fradkin Evgenia - Golda
2011-03-15
Pramod Gupta
2011-03-17
Christian Engel
PVD of thick Al-Layer
Pramod Gupta
2011-03-15
1. You can use KOH or NaOH solution for wet chemical etching of Al. Even the AZ
series photoresist developers work well for etching of Al because they are also
KOH based solution.

2. Why do you want to use oxidation barrier? If you want to pattern the thick Al
film, you can use photoresist directly on Al film without any oxidation barrier
like Au. For etching the Al film in PR developer or KOH, you have to hard bake
the PR at higher temp.

Let me know if you have any questions.

Thanks.

Pramod Gupta
21084 Red Fir Court
Cupertino, CA 95014
Phone: (408) 253-1646

--- On Tue, 3/15/11, Christian Engel  wrote:


From: Christian Engel 
Subject: [mems-talk] PVD of thick Al-Layer
To: [email protected]
Date: Tuesday, March 15, 2011, 1:34 PM


Hello everybody,

for a project I need an Al-layer >2,5µm thickness. We are able to do PVD for
this. First question is if anybody has some advices for wet etching? I
thought about using ANPE, but we don't have any eyperiences with such thick
layers. Second question is, if there are any known oxydation barriers I
could use? Perhaps a thin Au-layer could work? But I am concerned about the
high etch-rate of Al in aqua regia, which I would use for etching Au.

Any advice is highly appreciated.

Best regards, Chris
reply
Events
Glossary
Materials
Links
MEMS-talk
Terms of Use | Contact Us | Search
MEMS Exchange
MEMS Industry Group
Coventor
Harrick Plasma
Tanner EDA
Mentor Graphics Corporation
MEMS Technology Review
Process Variations in Microsystems Manufacturing
Addison Engineering