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MEMSnet Home: MEMS-Talk: Etching of SiN
Etching of SiN
2011-03-24
kapil kumar jain
2011-03-24
antwi nimo
2011-03-24
Mark West
2011-03-24
Benjamin Gesemann
2011-03-25
ozgur celik
Etching of SiN
ozgur celik
2011-03-25
Hi,

Using hot H3PO4 is complicated since you will need a condenser and etc,
1 % HF etches SiN at about 600 A/min, you can reduce or increase the rate by
changing concentration.

Regards

Ozgur Celik


> Date: Thu, 24 Mar 2011 10:53:41 +0530
> From: [email protected]
> To: [email protected]
> Subject: [mems-talk] Etching of SiN
>
> What is the optimum concentration of SiN etchant ? The thickness is of
> the order of 1000 A.
reply
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