Hello everyone,

           I have the objective to build a large low frequency electrostatic
resonator using SU8. I tried first PMGI as sacrificial layer and I came to
different sorts of problems related to the wet release of the PMGI. I am
trying now amorphous silicon as a sacrificial layer and I use XeF2 gas to
release the aSi.

The process seems better in terms of stiction. However, the release fails
usually as the XeF2 attacks the isolation layer of
Silicon Nitride underneath the a-Si。
my questions for you are:

1) Has anyone use a-Si as a sacrificial layer before with SU8? If yes, can
you share your experience?

2) To what extent XeF2 etches Silicon nitride and what other isolation layer
you recommend.

3) What is your experience about adhesion of SU8 to silicon nitride?

Thanks in advance,
Cheers,
Khaled Ramadan