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MEMSnet Home: MEMS-Talk: Ti etching and S1813 resist
Ti etching and S1813 resist
2011-07-12
Shane GUO
2011-07-12
Kirt Williams
2011-07-12
Michael Martin
2011-07-12
Shane GUO
2011-07-12
G. Puebla-Hellmann
2011-07-13
David Springer
2011-07-17
Yunda Wang
2011-07-14
Shane GUO
Ti etching and S1813 resist
David Springer
2011-07-13
It is possible to etch Ti with XeF2 as a dry no plasma etch. it is extremely
selective to polymers, SiO2 and most other materials. It does require some
adjustments to the process that are not available on our standard XeF2 etchers
so If you are interested please contact me.

David Springer
XACTIX Inc.
[email protected]
+1-412-381-3195

On Jul 12, 2011, at 3:45 PM, "G. Puebla-Hellmann"  wrote:

> Hi,
>
> I do not have any experience with S1813, but i've tried to remove 5nm Ti
> sticking films from Si/SiOx wafers were i needed the SiOx layer
> unaffected, with H2O2. Unfortunately, H2O2 seemed to be a very slow  Ti
> etchant, it seems that heating (50 degrees) helped, but my guess is an
> etch rate of almost sub nm / minute. I did not properly check this with
> a stepper, so I would be carefull here, also the gold layer that was on
> top may have alloyed with the titanium.
>
> Hope this helps to some degree,
>
> Best,
>
> Gabriel
reply
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