Hi,

I am not sure what's the reason you don't like HF but HF:HNO3: H2O at
1:1:40 could work on etching Ti really good which only contains a
little HF. I guess the etching time for 100nm could be less than 1
min.

Another way is to use RIE with O2 and CF4 plasma, for example CF4:O2 @
16sccm:4sccm, RIE should work and you don't actually need DRIE.

Best
Yunda

2011/7/12 Shane GUO :
> Hi all,
>
> I would like to use S1813 resist as an etching mask for Ti. I am wondering if
there is anything that does not contain HF can work for me? I am thinking about
oxalic acid or H2O2. Do they attack S1813 resist? Can they work for a 100nm Ti
layer? Any suggestion is welcome.
>
>
> Best regards

--
Yunda Wang, Ph.D. Candidate
Department of Mechanical engineering
University of Colorado - Boulder
Boulder,Co. US. 80302
(614)3120920
E-mail: [email protected]