A MEMS Clearinghouse® and information portal
for the MEMS and Nanotechnology community
RegisterSign-In
MEMSnet Home About Us What is MEMS? Beginner's Guide Discussion Groups Advertise Here
News
MEMSnet Home: MEMS-Talk: RIE selective SiO2
RIE selective SiO2
2011-07-21
Gustavo Rehder
2011-07-22
Salam Gabran
RIE selective SiO2
Salam Gabran
2011-07-22
SiO RIE
Pressure: 250 mTorr
ICP: 250 W
RIE: 100 W
CF4: 30sccm
Rate: 285sec to etch 320nm PECVD Oxide

no oxygen or SF6
etch rate of SiO is higher than SiN but i don't have info on selectivity

===================================
Salam R. Gabran, MASc.
Research associate, PhD. Candidate
Center for Integrated RF Engineering
(CIRFE Lab)
ECE Dept., University of Waterloo,
200 University Avenue West
Waterloo, Ontario, N2L3G1
cell.: 519-729-8066
Web: www.ece.uwaterloo.ca/~sgabran

reply
Events
Glossary
Materials
Links
MEMS-talk
Terms of Use | Contact Us | Search
MEMS Exchange
MEMS Industry Group
Coventor
Harrick Plasma
Tanner EDA
Process Variations in Microsystems Manufacturing
MEMS Technology Review
The Branford Group
Tanner EDA by Mentor Graphics