Vacuum vapor prime.  I can do free tests.  Bill Moffat

-----Original Message-----
From: [email protected] [mailto:mems-
[email protected]] On Behalf Of jumril yunas
Sent: Tuesday, July 26, 2011 7:52 PM
To: [email protected]
Subject: [mems-talk] Si3N4 etching using H3PO4

currently I use H3PO4 at 150 degree C to etch nitride layer. The nitride layer
can be etched at etch rate of 3-5 nm/min and standard AZ photoresist can be used
as mask. The problem is that the resist pattern can not protect the nitride
lying underneath the photoresist hence reduce the resolution. does anyone  know
how to improve this etching method ?

thanks

Dr. Jumril Yunas