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MEMSnet Home: MEMS-Talk: Anodic bonding with intermediate PECVD oxide layer
Anodic bonding with intermediate PECVD oxide layer
2011-09-28
Shree Narayanan
Anodic bonding with intermediate PECVD oxide layer
Shree Narayanan
2011-09-28
Hello All,

I am attempting to anodic bond a 2x4cm samples of borofloat and silicon. The
borofloat has PECVD oxide layer, ~400nm, on it and the silicon has etched
channels. I have attempted bonding at 400C and 1250V with a 0.5kg weight
placed on it.

We have had no issues bonding without the PECVD oxide. However, with oxide,
it bonds incompletely. Arbitrary portions of the sample have fringes due to
lack of bonding. Does anyone have experience with this and can give me some
pointers.

Thanks
Shree
reply
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