Hello everyone,

I am planning to perform some KOH anisotropic wet etching of silicon to create
V-grooves with ~ 1 um width, and for that I am wondering if I may use sputtered
oxide as the etch mask. I have seen a lot of papers using thermal oxide but I
would like to see if sputtered oxide would work as well, since I have easy
access to a sputtering station. Any advice would be very much appreciated!

Thank you in advance,
JJ