Hi
What do you get on the wafer after develop?
Also, 110 softbake is on the high side.

-----Original Message-----
From: [email protected]
[mailto:[email protected]] On Behalf Of Yingnan
Wang
Sent: Monday, February 13, 2012 2:35 PM
To: [email protected]
Subject: [mems-talk] AZ5214E as positive resist

Dear all,

I am having some trouble in photolithograpy with AZ5214E, which works as
positive resist.

The pattern I want to make is an array of micron dots, with diameter of 3
microns. But no matter how I change the exposure time, I just cannot develop
successfully. I want to know why. The parameters I use are listed below:

Photoresist - AZ5214E
Substrate - 4" Silicon wafer

Step 1. Clean wafer with Acetone, IPA abd DI water and dehydration bake at
150 degrees for 10 minutes.

Step 2: Spin coat HMDS at 4000 rpm for 35 seconds, without bake.

Step 3: Spin coat AZ5214E at 4000rpm for 45 seconds and hotplate (110
degrees) bake for 90 seconds.

Step 4: Expose at 8mW/cm^2 for various exposure time, from 10 to 70 seconds.


Step 5: Develop using MIF 300K developer.

Thanks a lot!

All the best,
WANG, Yingnan