Dear Yingnan,

   I suggest you consult the data sheet for the resist which you can easily find
online. Also, if you want help, you need to describe in more detail what is not
working -- do you see any patterns at all? or is something else wrong? Have you
tried it without HMDS? Is the resist expired? Is the developer you are using the
correct one? How do you know?

I would do an RCA1 or piranah clean before processing, and you will need at
least 25 secs of exposure using your 8 mW/cm2 source to meet the minimum
exposure energy.

Felix
Applied Quantum Technologies

On Feb 13, 2012, at 7:34 AM, Yingnan Wang wrote:

> Dear all,
>
> I am having some trouble in photolithograpy with AZ5214E, which works as
positive resist.
>
> The pattern I want to make is an array of micron dots, with diameter of 3
microns. But no matter how I change the exposure time, I just cannot develop
successfully. I want to know why. The parameters I use are listed below:
>
> Photoresist - AZ5214E
> Substrate - 4" Silicon wafer
>
> Step 1. Clean wafer with Acetone, IPA abd DI
> water and dehydration bake at 150 degrees for 10 minutes.
>
> Step 2: Spin coat HMDS at 4000 rpm for 35
> seconds, without bake.
>
> Step 3: Spin coat AZ5214E at 4000rpm for 45
> seconds and hotplate (110 degrees) bake for 90 seconds.
>
> Step 4: Expose at 8mW/cm^2 for various exposure time, from 10 to 70 seconds.
>
> Step 5: Develop using MIF 300K developer.
>
> Thanks a lot!
>
> All the best,
> WANG, Yingnan


Felix Lu
[email protected]