A MEMS Clearinghouse® and information portal
for the MEMS and Nanotechnology community
RegisterSign-In
MEMSnet Home About Us What is MEMS? Beginner's Guide Discussion Groups Advertise Here
News
MEMSnet Home: MEMS-Talk: Sputtered oxide as KOH anisotropic wet etching mask
Sputtered oxide as KOH anisotropic wet etching mask
2012-02-11
JJ HU
2012-02-13
Morrison, Richard H., Jr.
2012-02-13
Kirt Williams
2012-02-13
Ruiz, Marcos Daniel (SGNCOE)
2012-02-13
Tim Eschrich
2012-02-14
Andrew Sarangan
Sputtered oxide as KOH anisotropic wet etching mask
Kirt Williams
2012-02-13
Hi JJ--

In my etch-rate tests, silicon dioxide sputtered with an ion mill had about
the same etch rate in 80 deg C KOH as did thermally grown silicon dioxide.
Normally oxide etches too fast in KOH to be used as a mask. In your case,
you're only etching down about 1 um, so the oxide should work OK. Note that
the longer you leave your wafers in the KOH, the more the oxide mask will be
etched sideways, making your trenches wider.
For the densest, sturdiest oxide, sputter at a high power.

   --Kirt Williams


-----Original Message-----
From: [email protected]
[mailto:[email protected]] On Behalf
Of JJ HU
Sent: Saturday, February 11, 2012 10:26 AM
To: [email protected]
Subject: [mems-talk] Sputtered oxide as KOH anisotropic wet etching mask

Hello everyone,

I am planning to perform some KOH anisotropic wet etching of silicon to
create V-grooves with ~ 1 um width, and for that I am wondering if I may use
sputtered oxide as the etch mask. I have seen a lot of papers using thermal
oxide but I would like to see if sputtered oxide would work as well, since I
have easy access to a sputtering station. Any advice would be very much
appreciated!

Thank you in advance,
JJ
reply
Events
Glossary
Materials
Links
MEMS-talk
Terms of Use | Contact Us | Search
MEMS Exchange
MEMS Industry Group
Coventor
Harrick Plasma
Tanner EDA
Tanner EDA by Mentor Graphics
MEMStaff Inc.
Mentor Graphics Corporation
Nano-Master, Inc.