Sputtered oxide as KOH anisotropic wet etching mask
Tim Eschrich
2012-02-13
Silicon nitride works better with KOH, you should find the etch rate is
lower for oxide if you use TMAH.
-----Original Message-----
From: mems-talk-bounces+tceschri=cox.net@memsnet.org
[mailto:mems-talk-bounces+tceschri=cox.net@memsnet.org] On Behalf Of Ruiz,
Marcos Daniel (SGNCOE)
Sent: Monday, February 13, 2012 12:40 PM
To: General MEMS discussion
Subject: Re: [mems-talk] Sputtered oxide as KOH anisotropic wet etching mask
Assuming sputtered oxide will have the stoichiometry that will be resistant
to the etch; the main problem I see is that sputtered films tend to be
porous. Annealing might help, but I suspect sputtering will result in a
poor mask material.
Dan