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MEMSnet Home: MEMS-Talk: Sputtered oxide as KOH anisotropic wet etching mask
Sputtered oxide as KOH anisotropic wet etching mask
2012-02-11
JJ HU
2012-02-13
Morrison, Richard H., Jr.
2012-02-13
Kirt Williams
2012-02-13
Ruiz, Marcos Daniel (SGNCOE)
2012-02-13
Tim Eschrich
2012-02-14
Andrew Sarangan
Sputtered oxide as KOH anisotropic wet etching mask
Tim Eschrich
2012-02-13
Silicon nitride works better with KOH, you should find the etch rate is
lower for oxide if you use TMAH.

-----Original Message-----
From: [email protected]
[mailto:[email protected]] On Behalf Of Ruiz,
Marcos Daniel (SGNCOE)
Sent: Monday, February 13, 2012 12:40 PM
To: General MEMS discussion
Subject: Re: [mems-talk] Sputtered oxide as KOH anisotropic wet etching mask

Assuming sputtered oxide will have the stoichiometry that will be resistant
to the etch; the main problem I see is that sputtered films tend to be
porous.  Annealing might help, but I suspect sputtering will result in a
poor mask material.

Dan
reply
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