Hi everyone,

the process flow as follows,
1 etch cavity on the 7740 glass
2 deposit  200nm Al layer  on the cavity of  7740 glass,
3 anodic bonding process with silicon,  400 degreeC, 800V

the problem:
 we always find the  Al grass on the al layer after the anodic bonding,
 the Al grass dimension: about 2~3um long, and with a diameter of 200nm

the quantity of grass is  not too much , but it cause the device short
circuit.

have somebody met this problem before?  what's the source of
this phenomenon?

Any suggestions would be appreciated!




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Yan Xin
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