I am looking for someone to provide photolithographic patterning as
a service.
Lithography requirements are:
3 inch wafers of InP but also possibly GaAs or Si, possibly 4 or 6 inch
later.
-reticule will be 4 inch for 3 inch wafers.
-X5 reduction required, (1:1 projection not acceptable)
-365 or 248nm exposure, 248nm preferred
-Die size approx 15mm by 5 mm
-Field size 15mm by 15mm ie 3 dies per field. Larger field is OK
-CD 2.5 micron with 3 sigma better than 0.05 micron across a six inch
wafer (equivalent)
-Pattern required in resist on oxide coated (approx 0.1 micron thick)
wafer. This is first photolithographic step.
- Volume, tens of wafers per year possibly more
Any comments welcome, anyone else need this service?
Mike
Email: [email protected]