Hi, Richard,

I am afraid that my message is late. Try the following:
1. J. Herzog, L. Csepregy, and H. Seidel,"X-ray investigation of boron and
germanium doped silicon epitaxial layers", J. Electrochem. Soc., Vol. 131,
pp. 2969-2974, 1984.
2. J. F. Black, D. E. Cullen, and T. W. Grudkowski, "Studies of boron and
boron + Germanium doped epitaxial silicon films for ultrathin silicon
diaphragms," in Ext. abstr., Symp. Micromechanics and Micromachining,
Electrochem. Soc. Meet., Bontreal, Canada, May 9-14, 1982, pp. 272-273.

Good Luck.

Yahong
>From: Richard Koba 
>Reply-To: Richard Koba , [email protected]
>To: [email protected]
>Subject: B-Si-Ge epi
>Date: Fri, 18 Jun 1999 06:54:32 -0400
>
>Heavy boron doping of Si epitaxial layers creates an etch resistant
>material, but it is under severe stress due to the difference in size of
>the Si and B atoms.  This stress can be eliminated by co-doping with Ge.
>
>I would like to learn the recipe for creating such low-stress Si epi
>layers co-doped with B and Ge.  Could someone please direct me to a
>reference (book or paper) which describes the experimental procedure to
>achieve such an epi layer using an atmospheric pressure CVD system?
>
>Thank you
>--
>Richard Koba
>Arlington, MA
>
>
>


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