Hello Nathan,
Im not sure about your design, but if you have to etch silicon by wet
chemistry there is definitely no alternative to HF-containing solutions. You
can save yourself any search. If its possible to use DRIE, you can define a
process without side wall passivation which etches nearly isotropic.
Best regards/Mit freundlichem Gruß
André Bödecker
Institut für Mikrosensoren, -aktoren und -systeme
Universität Bremen Fachbereich 1
Otto-Hahn-Allee1
28359 Bremen
Tel: 0421 218 62596
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