I used SU-8 2002 for sacrificial layer(about 2um).

after whole process is finished, I want to remove SU-8 layer.

but, it is very hard. I used Remover PG(80℃, 30min) but it is
indissolubleness(?).

For forming mems sensor, the metal layers are deposited around a SU-8 layer.

So I want to remove SU-8 2002 without damages of other structures.

How can I do it?
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