Hi Ryan,
    Not sure about relative powers of platen bias and ICP.  All of our recipes
have RIE (platen bias) lower than ICP.  That etch rate was without back side
cooling, though I bet you might get somewhat better anisotropy with it.

Cheers,
  Michael
________________________________________
From: [email protected] [mems-talk-
[email protected]] on behalf of Ryan
[[email protected]]
Sent: Tuesday, May 20, 2014 4:35 AM
To: [email protected]
Subject: Re: [mems-talk] Best recipe to etch sio2 using CHF3 gas with ULVAC
NE-550

Thanks Michael.



Otherwise, if source power is lower than bias, does it damage wafer or
interrupt uniformity and etch rate?

In addition, back side cooling (He) ??



Regards,



Ryan



EXCELSIOR

Manager

Ryan Hyunmin Kim

E : [email protected]

M: +82-10-3802-2229



_______________________________________________
Hosted by the MEMS and Nanotechnology Exchange, the country's leading
provider of MEMS and Nanotechnology design and fabrication services.
Visit us at http://www.mems-exchange.org

Want to advertise to this community?  See http://www.memsnet.org

To unsubscribe:
http://mail.mems-exchange.org/mailman/listinfo/mems-talk


_______________________________________________
Hosted by the MEMS and Nanotechnology Exchange, the country's leading
provider of MEMS and Nanotechnology design and fabrication services.
Visit us at http://www.mems-exchange.org

Want to advertise to this community?  See http://www.memsnet.org

To unsubscribe:
http://mail.mems-exchange.org/mailman/listinfo/mems-talk