Mehmet, we like to think of ourselves as HMDS experts and we are totally
confused. Is your process:- 1) Vacuum Vapor Prime at 150 degrees C to give a
monolayer of HMDS then apply 10 microns of resist.  Then expose and develop.  If
so your 10 microns of resist is sitting on top of a monolayer of resist and when
you expose and develop it should act like a normal resist layer whether you have
a monolayer of HMDS at the wafer surface or not.  Can you clarify.  Is this your
process.  If so are you soft baking at too high a temperature only when you do
HMDS?  Bill Moffat CEO YES.

-----Original Message-----
From: [email protected] [mailto:mems-
[email protected]] On Behalf Of Mehmet
Yilmaz
Sent: Monday, September 21, 2015 2:25 AM
To: General MEMS discussion
Subject: [mems-talk] About difficulty in photoresist development (if using HMDS
as adhesion layer)

Dear mems-talk community,
If I use HMDS as adhesion layer, I am having a problem with the development of a
photoresist called AZ4562 (about 10 micron thickness). In addition, I am having
the same development problem with AZ5214E (about 1.4 micron thickness).

If I do not use HMDS, the development time is usually about 60 seconds, or even
less. However, if I use HMDS, the development time goes up to 45 minutes (not
seconds...) and still the development is not successful, but the resist is
completely removed from some parts of the patterned areas on the wafer.

Also, I have seen this problem with different substrates such as Silicon,
Quartz, and Pyrex.

I am wondering what would be the reason for that? Is it possible that HMDS is
old, and out of date? Could that explain the problem? Or, do you have any other
comments based on your own experience? Could you please comment?

I am looking forward to your replies.

Thanks in advance,

Mehmet

Mechanical Engineer
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